2025 | A High-Power SPDT Switch with Resonant Isolation Based on GaAs BiFET Technology for Sub-6 GHz Front-End Modules
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작성자 관리자 작성일26-01-01 11:49 조회119회관련링크
https://ieeexplore.ieee.org/document/11309720
본문
Jaehyun Kwon, Jaeyong Lee, Jinho Yoo, Changkun Park
IEEE Access
vol. 13, pp. 216110 - 216117, 22. Dec. 2025
IEEE Access
vol. 13, pp. 216110 - 216117, 22. Dec. 2025